*
  –10 A,
  –20 V. RDS(ON) = 11 mΩ RDS(ON) = 14 mΩ RDS(ON) = 20 mΩ
* Fast switching speed
* High performance trench technology fo.

Features
*
  –10 A,
  –20 V. RDS(ON) = 11 mΩ RDS(ON) = 14 mΩ RDS(ON) = 20 mΩ
* Fas.

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features
*
  –10 A,
  –20 V. RDS(ON) = 11 mΩ RDS(ON) = 1.

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